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81 Electron Device Letters November, 2017 Novel Approach for the Reduction of Leakage Current Characteristics of 20 nm DRAM Capacitors With ZrO2–Based High-k Dielectrics
80 Journal of Electronic Testing October, 2017 Novel Method for Nondestructive Body Effect Measurement in Dynamic Random Access Memory
79 Journal of Nanoscience and Nanotechnology October, 2017 Electrical Properties of Solution-Processed Nanolaminates of ZrO2 and Al2O3 as Gate Insulator Materials for Thin-Film Transistors
78 Journal of Nanoscience and Nanotechnology October, 2017 Interface Traps Analysis in p-Type Poly-Si TFTs Under Hot Carrier Stress Using the Charge Pumping Method
77 Scientific Reports March, 2017 Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling
76 Abnormal degradation of high-voltage p-type MOSFET with n+ polycrystalline silicon gate during AC stress November, 2016 We investigated the abnormal degradation of high-voltage p-type MOSFET (HV pMOSFET) under negative AC gate bias stress.
75 Electrical characterization of electron beam induced damage on sub-10nm n-channel MOS transistors using nano-probing technique November, 2016 Electron beam induced damage on sub-10nm n-channel MOS transistors was evaluated using an atomic force microscopy-based nano-probing technique.
74 A study of the characteristics of indium tin oxide after chlorine electro-chemical treatment October, 2016 In this work, we investigate the influence of a chlorine-based electro-chemical surface treatment on the characteristics of indium tin oxide (ITO).
73 Dielectric Properties of Solution-Processed ZrO2 for Thin-Film Transistors October, 2016 We have proposed an optimized ZrO2 dielectric layer via solution processing for use in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs).
72 Optimization of Solution-Processed ITZO/IGZO Dual-Active-Layer Thin-Film Transistors October, 2016 We successfully fabricated dual-active-layer (DAL) thin-film transistors (TFTs) via a solution process with an active back InGaZnO (IGZO) layer.
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