::: Advanced Display & Nano Device Laboratory :::

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77 Scientific Reports March, 2017 Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling
76 Abnormal degradation of high-voltage p-type MOSFET with n+ polycrystalline silicon gate during AC stress November, 2016 We investigated the abnormal degradation of high-voltage p-type MOSFET (HV pMOSFET) under negative AC gate bias stress.
75 Electrical characterization of electron beam induced damage on sub-10nm n-channel MOS transistors using nano-probing technique November, 2016 Electron beam induced damage on sub-10nm n-channel MOS transistors was evaluated using an atomic force microscopy-based nano-probing technique.
74 A study of the characteristics of indium tin oxide after chlorine electro-chemical treatment October, 2016 In this work, we investigate the influence of a chlorine-based electro-chemical surface treatment on the characteristics of indium tin oxide (ITO).
73 Dielectric Properties of Solution-Processed ZrO2 for Thin-Film Transistors October, 2016 We have proposed an optimized ZrO2 dielectric layer via solution processing for use in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs).
72 Optimization of Solution-Processed ITZO/IGZO Dual-Active-Layer Thin-Film Transistors October, 2016 We successfully fabricated dual-active-layer (DAL) thin-film transistors (TFTs) via a solution process with an active back InGaZnO (IGZO) layer.
71 Interface Trap and Oxide Charge Generation in p-MOSFETs by Direct/Fowler-Nordheim Tunneling October, 2016 In this study, we characterized the interface and oxide charge generation in p-MOSFETs under negative bias temperature stress (NBTS).
70 Comparison of Electrical Properties and Thermal Degradation of RGB-Organic Light Emitting Diodes October, 2016 The electrical properties and thermal degradation of red (R), green (G), and blue (B) organic-lightemitting-diodes (OLEDs) were characterized using the current–voltage (I–V ) method.
69 A New Test Method for Bit Line Disturbance Leakage Current in Dynamic Random Access Memory October, 2016 This work proposes a new test algorithm for detecting bit line disturbed weak cells in dynamic random access memory (DRAM).
68 Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement August, 2016 Defect depth profiles of Cu (In1−x,Gax)(Se1−ySy)2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS).
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